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  ds30177 rev. b-2 1 of 2 MBRB2070CT-mbrb20100ct www.diodes.com  diodes incorporated MBRB2070CT - mbrb20100ct 20a high voltage schottky barrier rectifier b c d e g h j k l m a 123 4 pin 1 pin 3 pin 2 & 4 d 2 pak dim min max a 9.65 10.69 b 14.60 15.88 c 0.51 1.14 d 2.29 2.79 e 4.37 4.83 g 1.14 1.40 h 1.14 1.40 j 8.25 9.25 k 0.30 0.64 l 2.03 2.92 m 2.29 2.79 all dimensions in mm maximum ratings and electrical characteristics @ t a = 25  c unless otherwise specified  guard ring die construction for transient protection  low power loss, high efficiency  high surge capability  high current capability and low forward voltage drop  for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications  plastic material: ul flammability classification rating 94v-0 mechanical data  case: d 2 pak, molded plastic  terminals: plated leads solderable per mil-std-202, method 208  polarity: as marked on body  weight: 1.7 grams (approx)  marking: type number single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol mbrb 2070ct mbrb 2080ct mbrb 2090ct mbrb 20100ct unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 70 80 90 100 v rms reverse voltage v r(rms) 49 56 63 70 v average rectified output current (note 1) @ t c = 110  c i o 20 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 150 a forward voltage drop @ i f = 10a, t j = 125  c @ i f = 10a, t j = 25  c @ i f = 20a, t j = 125  c @ i f = 20a, t j = 25  c v fm 0.75 0.85 0.85 0.95 v peak reverse current @t a = 25  c at rated dc blocking voltage @ t a = 125  c i rm 0.1 100 ma typical junction capacitance (note 2) c j 275 pf typical thermal resistance junction to case (note 1) r  jc 2.0  c/w voltage rate of change @ rated v r dv/dt 10000 v/  s operating temperature range t j -65 to +150  c storage temperature range t stg -65 to +175  c notes: 1. thermal resistance junction to case mounted on heatsink. 2. measured at 1.0 mhz and applied reverse voltage of 4.0v dc. t c u d o r p w e n features
t c u d o r p w e n ds30177 rev. b-2 2 of 2 MBRB2070CT-mbrb20100ct www.diodes.com 0.1 1.0 10 100 0.2 0.1 0.4 0.3 0.6 0.7 0.5 0.8 0.9 1.0 i , instantaneous fwd current (a) f v , instantaneous fwd voltage (v) f fi g . 2 t y pical forward characteristics 0 50 100 150 200 250 300 1 10 100 i , peak fwd surge current (a) fsm number of cycles at 60hz fig. 4 max non-repetitive surge current 100 200 500 1000 0.1 1.0 10 100 c , junction capacitance (pf) j v , reverse voltage (v) r fi g . 5 t yp ical junction ca p acitance 0 4 8 0 50 100 150 i , average rectified current (a) o t , case temperature ( c) c fig. 1 fwd current derating curve 12 16 20 0.001 0.01 0.1 1.0 10 100 0 20 40 80 100 60 120 0 t=125c j 0 t = 75 c j 0 t = 25 c j i , instantaneous reverse current (ma ) r fi g .3 t y pical reverse characteristics v , reverse voltage (v) r


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